BAV23C datasheet, PDF - EEWORLD Datasheet

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BAV23C: DescriptionSchottky diodes; CategoryDiscrete semiconductor; File Size170KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BAV23C Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model:BAV23C

product features:

Fast Switching Speed

High Conductance

For General Purpose Switching Applications

Product parameters:

Pd dissipated power: 350mW

Io rectified current: 100mA

VR reverse working voltage: 250V

VF forward buck: 1.25V

IR reverse current: 0.1uA

Trr Forward recovery time: 50ns

Package: SOT-23

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

BAV23A/C/S

SCHOTTKY BARRIER DIODE

SOT-23

FEATURES

Fast Switching Speed

High Conductance

For General Purpose Switching Applications

BAV23A

BAV23C

BAV23S

MARKING: KT7

MARKING: KT6

MARKING:KL31

MAXIMUM RATINGS ( T

=25

℃

unless otherwise noted )

Symbol

RRM

RWM

R(RMS)

FSM

ΘJA

stg

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

RMS Reverse Voltage

Average Rectified Output Current

Non-repetitive Peak Forward Surge Current @ t=1μs

@ t=100μs

@ t=10ms

250

175

400

1.7

350

357

150

-55~+150

℃/W

℃

Value

Unit

ELECTRICAL CHARACTERISTICS(T

=25

℃

unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Forward voltage

Total capacitance

Reverse recovery time

Symbol

(BR)

tot

=100μA

=250V

=100mA

=200mA

=0V,f=1MHz

= I

=30mA, I

=0.1×I

, R

=100Ω

Test conditions

Min

250

0.1

1.25

Typ

Max

Unit

μA

A,Feb,2012

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