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BAV23A

Description
0.225 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size299KB,1 Pages
ManufacturerNanjing International Group Co.,Ltd
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0.225 A, 2 ELEMENT, SILICON, SIGNAL DIODE

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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
BAV23A/C/S
SCHOTTKY BARRIER DIODE
SOT-23
FEATURES
Fast Switching Speed
High Conductance
For General Purpose Switching Applications
BAV23A
BAV23C
BAV23S
MARKING: KT7
MARKING: KT6
MARKING:KL31
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ t=1μs
@ t=100μs
@ t=10ms
250
175
400
9
3
1.7
350
286
125
-55~+150
V
V
mA
A
A
A
mW
℃/W
Value
Unit
ELECTRICAL CHARACTERISTICS(T
a
=25
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
tot
t
rr
I
R
=100μA
V
R
=250V
I
F
=100mA
I
F
=200mA
V
R
=0V,f=1MHz
I
F
= I
R
=30mA, I
rr
=0.1×I
R
, R
L
=100Ω
Test conditions
Min
250
0.1
1
1.25
5
50
Typ
Max
Unit
V
μA
V
pF
ns
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