MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified
| Parameter Name | Attribute value |
| Product Attribute | Attribute Value |
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V, 60 V |
| Id - Continuous Drain Current | 20 A , 54 A |
| Rds On - Drain-Source Resistance | 15.5 mOhms, 7 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V , 1.5 V |
| Vgs - Gate-Source Voltage | 10 V, 10 V |
| Qg - Gate Charge | 12 nC, 25 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Configuration | Dual |
| Pd - Power Dissipation | 27 W,48 W |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Packaging | Cut Tape |
| Packaging | MouseReel |
| Packaging | Reel |
| Transistor Type | 2 N-Channel |
| Fall Time | 10 ns , 11 ns |
| Rise Time | 2 ns, 3 ns |
| Factory Pack Quantity | 3000 |
| Typical Turn-Off Delay Time | 18 ns , 26 ns |
| Typical Turn-On Delay Time | 10 ns , 14 ns |
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