BAT54S datasheet, PDF - EEWORLD Datasheet

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BAT54S: DescriptionDC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA; CategoryDiscrete semiconductor Schottky diode; File Size64KB，2 Pages; ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.; Websitehttp://www.slkormicro.com/; Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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BAT54S Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA

BAT54S Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	30V
Average rectified current (Io)	200mA
Forward voltage drop (Vf)	1V @ 100mA

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BAT54/A/C/S

Surface Mount Schottky Barrier Diode

SOT-23

Features

Low turn-on voltage

Fast switching

PN junction guard ring for transient and ESD

protection

0.020(0.51)

0.015(0.37)

0.055(1.40)

0.047(1.19)

0.098(2.50)

0.083(2.10)

Mechanical Data

Case: SOT-23, Molded plastic

Terminals: Solderable per MIIL-STD-202,

Method 208

0.080(2.05)

0.070(1.78)

0.024(0.61)

0.018(0.45)

0.120(3.05)

0.104(2.65)

0.041(1.05)

0.047(0.89)

0.043(1.10)

0.035(0.89)

0.007(0.178)

0.003(0.076)

0.006(0.15)

0.001(0.013)

0.024(0.61)

0.018(0.45)

Dimensions in inches and (millimeters)

BAT54

BAT54A

BAT54C

BAT54S

Maximum Ratings

Type Number

=25℃ unless otherwise specified

Symbol

RRM

RWM

Value

200

300

600

200

500

-65 to + 125

Min

Units

C /W

Max

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Repetitive Peak Forward Current

Forward Surge Current

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air

Operating and Storage Temperature Range

@ t=1.0s

FSM

θJA

, T

STG

Symbol

(BR)R

Electrical Characteristics

Type Number

Reverse Breakdown Voltage (Note 1)

Reverse Leakage Current

(Note 1) VR=25V

Forward Voltage

(Note 1)

IF=0.1mA

IF=1.0mA

IF= 10mA

IF = 30mA

IF=100mA

Typ

Junction Capacitance

VR=0, f=1.0MHz

Reverse Recovery Time (Note 2)

trr

Notes: 1. Short Duration Pulse Test used to Minimize Self-Heating Effect.

2. Reverse Recovery Test Conditions: IF=10mA through IR=10mA to IR=1.0mA,

=100Ω.

2.0

240

320

400

500

1000

5.0

Units

www.slkormicro.com

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