BAT54BRW datasheet, PDF - EEWORLD Datasheet

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BAT54BRW: DescriptionSchottky diode array; CategoryDiscrete semiconductor; File Size264KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BAT54BRW Overview

Schottky diode array

Features

Product Name: Schottky Diode Array

Product model: BAT54BRW

product features:

Low Forward Voltage Drop

Fast Switching

Small Surface Mount Package

PN Junction Guard Ring for Transient and ESD Protection

Available in Lead Free Version

Product parameters:

Pd power dissipation: 200mW

Io rectified current: 200mA

VR reverse working voltage: 30V

VF forward buck: 1V

IR reverse current: 2uA

Trr forward recovery time: 5ns

Package: SOT-363

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

BAT54ADW /BAT54BRW /

BAT54CDW /BAT54SDW /BAT54TW

SCHOTTKY BARRIER DIODE ARRAYS

FEATURES



Low Forward Voltage Drop



Fast Switching



Small Surface Mount Package



PN Junction Guard Ring for Transient and ESD Protection



Available in Lead Free Version

MARKING:

SOT-363

BAT54ADW

MARKING: KL6

BAT54BRW

MARKING: KLB

BAT54CDW

MARKING: KL7

BAT54SDW

MARKING:KL8

BAT54TW

MARKING: KLA

MAXIMUM RATINGS ( T

=25

℃

unless otherwise noted )

Symbol

RRM

RWM

FRM

FSM

ΘJA

stg

Parameter

Repetitive Peak Reverse Voltage

Peak Working Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Repetitive Peak Forward Current

Non-repetitive Peak Forward Surge Current @t≤1s

Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

200

300

600

200

500

125

-55~+150

℃/W

℃

Value

Unit

A,Sep,2010

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