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BAT42WS_04

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size33KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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0.1 A, 30 V, SILICON, SIGNAL DIODE

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DATA SHEET
BAT42WS~BAT43WS
SURFACE MOUNT SCHOTTKY BARRIER
VOLTAGE
FEATURES
• Low turn-on voltage
.054(1.35)
.045(1.15)
30 Volts
CURRENT
0.20 Ampers
SOD-323
Unit: inch (mm)
.078(1.95)
.068(1.75)
.014(.35)
.009(.25)
• Fast switching
• PN Junction Guard Ring for Transient and ESD Protection.
• Both normal and Pb free product are available :
.006(.15)
Pb free: 98.5% Sn above
.107(2.7)
.090(2.3)
MECHANICAL DATA
Case: SOD-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram Below
Approx. Weight: 0.0045 gram
.012(.30)MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
Parameter
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at Ta=75
O
C
Peak Forward Surge Current, 1. ms single half
sine-wave superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage
Maximum DC Reverse Current at Rated DC Blocking Voltage
Maximum Thermal Resistance (Note 1)
Operating Junction and Storage Temperature Range
Symbol
BAT42WS
L2
BAT43WS
L3
30
21
30
0.2
4.0
.002(.05)
Normal : 80~95% Sn, 5~20% Pb
.038(.95)
.027(.70)
Units
V
RRM
V
RMS
V
DC
I
AV
I
FSM
V
F
I
R
RθJA
T
J
,T
STG
0.4 /10mA
1.0 / 200mA
V
V
V
A
A
0.33 / 2.0mA
1.0 / 200mA
V
uA
O
0.5
635
-55 TO +125
C/W
O
C
Note: 1. Cj at Vr=1, f=1MHz
STAD-SEP.14.2004
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