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BAS20_R1_00001

Description
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAS20_R1_00001 Overview

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon,

BAS20_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BAS20_R1_00001 Preview

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BAS16~BAS21
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
100-250 Volts
POWER
350mWatts
SOT-23
Unit
inch(mm)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
PARAMETER
Marking Code
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average), Half Wave Rectification
with Resistive Load and f >=50 Hz
Peak Forward Surge Current, tp=1.0
µ
s single half
sine-wave superimposed on rated load
(JEDEC method)
Power Dissipation Derate Above 25
O
C
Maximum Forward Voltage
Maximum DC Reverse Current at Rated DC Blocking
Voltage T
J
= 25
O
C
Typical Junction Capacitance( Notes1)
Maximum Reverse Recovery (Notes2)
Typical Thermal Resistance
Storage Temperature Range
SYMBOL
B A S 16
A6
B A S 19
A8
100
120
200
2.5
350
B A S 20
A 80
150
200
200
2.5
350
1.0@100mA
B A S 21
A 82
200
250
200
2.5
350
UNITS
V
R
V
RM
I
O
I
FSM
P
TOT
V
F
I
R
CJ
T
RR
RΘJA
T
J
75
100
250
2
350
0.855@10mA
1
2
6
V
V
mA
A
mW
V
1
1.5
50
357
-55 TO +125
1
1.5
50
1
1.5
50
O
uA
pF
ns
C/W
O
C
SINGLE
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
REV.0.1-FEB.4.2009
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