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BAS19W-21W

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size179KB,3 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAS19W-21W Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate DIODE
SOT-323
BAS19W/20W/21W
FEATURES
SWITCHING DIODE
1.BASE
2.EMITTER 
3.COLLECTOR
 
1.25±0.05
1.01 REF
Power dissipation
P
D
:
200
m
W(Tamb=25℃)
Collector current
I
F
:
200
m
A
Collector-base voltage
V
R
: 19W:120 V; 20W:150V ; 21W:200V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃ 
2.30±0.05
1.30±0.03
Unit : mm
Marking :BAS19W
BAS20W
BAS21W
KA8
KT2
KT3
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless
otherwise
specified)
Parameter
BAS19W
Symbol
Test
conditions
MIN
100
MAX
0.30
UNIT
Reverse breakdown voltage
BAS20W
BAS21W
BAS19W
V
(BR) R
I
R
= 100µA
150
200
2.00±0.05
V
100V
I
R
V
R
=150V
200V
V
F
C
D
t
rr
I
F
=100mA
I
F
=200mA
V
R
=0V
f=1MHz
1000
1250
5
50
mV
0.1
µA
Reverse
voltage leakage current
BAS20W
BAS21W
Forward
Diode
voltage
capacitance
pF
nS
Reveres recovery time
I
F
=I
R
=30mA
I
rr
=0.1×I
R
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