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BAS19W

Description
Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 200mA 100V, 200mA, trr=50ns, VF=1.25 V@200mA,PD=200mW
CategoryDiscrete semiconductor    diode   
File Size1MB,4 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

BAS19W Overview

Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 200mA 100V, 200mA, trr=50ns, VF=1.25 V@200mA,PD=200mW

BAS19W Parametric

Parameter NameAttribute value
MakerJCET
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Number of components1
Maximum operating temperature150 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.05 µs
surface mountYES
Base Number Matches1

BAS19W Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
BAS19W/20W/21W
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
MARKING:
BAS19W:KA8 BAS20W:KT2 BAS21W:KT3
1
3
2
SWITCHING DIODE
SOT-323
KA8
KA8
KT2
KT2
KT3
KT3
Solid dot = Green molding compound device,
if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Symbol
V
RRM
V
R
I
O
BAS19W
100
BAS20W
150
200
BAS21W
250
Unit
V
mA
Non-Repetitive Peak
Forward Surge Current
@t=8.3ms
Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature Range
Junction to Ambient
I
FSM
2.5
200
625
150
-55~+150
A
mW
℃/W
P
D
R
θJA
T
J
T
STG
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
BAS19W
BAS20W
BAS21W
BAS19W
Reverse voltage leakage current
BAS20W
BAS21W
Forward voltage
Diode capacitance
Reveres recovery time
V
F
C
D
t
rr
I
R
V
R
=100V
V
R
=150V
V
R
=200V
I
F
=100mA
I
F
=200mA
V
R
=0V, f=1MHz
I
F
=I
R
=30mA,I
rr
=0.1×I
R
1
1.25
5
50
V
pF
ns
0.1
µA
V
(BR)
I
R
= 100µA
Symbol
Test
conditions
Min
100
150
250
V
Max
Unit
www.cj-elec.com
1
C,Oct,2014
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