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BAS16WT/R13

Description
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAS16WT/R13 Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAS16WT/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BAS16WT/R13 Preview

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DATA SHEET
MMBD4148W/MMBD4448W/BAS16W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Surface Mount Package ldeally Suited for Automatic lnsertion.
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
100 Volts
POWER
200mWatts
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
MECHANICAL DATA
Case: SOT-323 plastic case.
Terminals : Solderable per MIL-STD-750,Method 2026
Standard packaging: 8mm tape
SINGLE
2
Weight: approximately 0.0052 g
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
Pin 1.(Reference)
2. (Anode)
3. (Kathode)
1
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PARAMETER
Marking Code
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at T
A
=25
O
C
Peak Forward Surge Current, 1.0us
Power Dissipation Derate Above 25
O
C
SYMBOL
MMBD4148W
A2
MMBD4448W
A3
75
100
50
75
150
4
200
0.715@0.001A
0.855@0.01A
1.0@ 0.05A
1.25@0.15A
0.025@20V
2.5@75V
1.5
4.0
0.72 / 0.005A
1.0 / 0.1A
B A S 16W
A6
V
V
V
V
mA
A
mW
UNITS
V
R
V
RM
V
RMS
V
DC
I
AV
I
FSM
P
TOT
V
F
Maximum Forward Voltage
0.855 / 0.01A
0.087(2.20)
0.078(2.00)
V
Maximum DC Reverse Current at Rated DC Blocking Voltage
T
J
= 25
O
C
Junction Capacitance( Notes1)
Maximum Reverse Recovery (Notes2)
Typical Thermal Resistance
Operation and Storage Temperature Range
I
R
C
J
T
RR
R
θ
JA
T
J
2.5@75V
4.0
4.0
640
-55 to +150
1.0@75V
2.0
6.0
O
uA
pF
ns
C/W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
REV.0.2-MAR.3.2009
PAGE . 1
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