BAS116TW datasheet, PDF - EEWORLD Datasheet

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BAS116TW: Description0.2 A, 100 V, 3 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size136KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAS116TW Overview

0.2 A, 100 V, 3 ELEMENT, SILICON, SIGNAL DIODE

BAS116TW Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SEPARATE, 3 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G6
Number of components	3
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.2 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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BAS116TW/BAW156DW/BAV170DW/BAV199S

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE

FEATURES

•

Suface mount package ideally suited for automatic insertion.

Very low leakage current. 2nA typical at VR=75V.

Low capacitance. 2pF max at VR=0V, f=1MHz

In compliance with EU RoHS 2002/95/EC directives

100 Volts

POWER

200mWatts

MECHANICAL DATA

• Case: SOT-363 plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx weight: 0.008 gram

• Marking: BAS116TW :PA,BAW156DW :P4,BAV170DW :P3,BAV199S :PB

ABSOLUTE RATINGS (each diode)

PA RA ME TE R

R e ve r s e Vo l t a g e

P e a k R e ve r s e Vo l t a g e

C o nti nuo us F o r wa r d C ur r e nt

N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us

S ym b o l

Va lue

100

0.2

Uni ts

FSM

THERMAL CHARACTERISTICS

PA RA ME TE R

P o we r D i s s i p a ti o n (No te 1 )

The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt ( No te 1 )

J u n c t i o n Te m p e r a t u r e

S t o r a g e Te m p e r a t u r e

S ym b o l

TOT

J A

S TG

Va lue

200

625

-55 to 150

Uni ts

C /W

NOTE:

1. FR-4 Board = 70 x 60 x 1mm.

Fig.48

Fig.51

Fig.52

Fig.32

BAS116TW

REV.0.1-FEB.11.2009

BAW156DW

BAV170DW

BAV199S

PAGE . 1

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