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BAS-06

Description
0.2 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size300KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
Download Datasheet Parametric View All

BAS-06 Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

0.2 A, 40 V, 硅, 信号二极管

BAS-06 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage40 V
Maximum average forward current0.2000 A

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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
SOT-23
BAS40/-04/-05/-06
FEATURES
Low Forward Voltage
Fast Switching
SCHOTTKY
BARRIER
DIODE
BAS40 MARKING: 43•
BAS40-06 MARKING: 46
BAS40-05 MARKING:45
BAS40-04 MARKING:44
Maximum Ratings @Ta=25℃
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
Symbol
V
RRM
V
RWM
V
R
I
FM
P
D
R
θJA
T
J
T
STG
200
200
500
125
-55~+150
mA
mW
℃/W
40
V
Limit
Unit
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 10
μ
A
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0,f=1MHz
I
rr
=1mA, I
R
=I
F
=10mA
R
L
=100Ω
conditions
Min
40
200
380
1000
5
5
Max
Unit
V
nA
mV
pF
ns
1/2
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