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B4S

Description
Bridge Rectifier Diode, 0.8A, 400V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size243KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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B4S Overview

Bridge Rectifier Diode, 0.8A, 400V V(RRM),

B4S Parametric

Parameter NameAttribute value
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current30 A
Number of components4
Maximum operating temperature150 °C
Maximum output current0.8 A
Maximum repetitive peak reverse voltage400 V
surface mountYES

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B1S T H R U B10S
S U R FA C E M O U N T
G L AS S P ASSIV AT E D
BR ID G E R E C T IF IE R S
H igh E fficie nt R e ctifie rs
Voltage R ange
-1 0 0 t o 1 0 0 0 V olts
Current
-0 .8 A m pe re s
F e ature s
R a ting to 1 00 0V P RV
lde a l for prin te d c ircu it b oa rd
R e liab le lo w c ost c on stru ction u tilizin g
mo lde d p last ic te ch niqu e re su lts in ine xpe nsive
product
Lead tin plated copper
.0 3 1 (0 .8 )
.0 1 9 (0 .5 )
.2 7 5 (7 .0 )M A X
 ̄  ̄
.0 6 7 (1 .7 )
.0 5 7 (1 .3 )
.0 5 1 (1 .3 )
.0 3 5 (0 .9 )
.1 6 5 (4 .2 )
.1 5 0 (3 .8 )
.0 1 4 (.3 5 )
.0 0 6 (0 1 5 )
.1 0 6 (2 .7 )
.0 9 (2 .3 )
.1 9 3 (4 .9 )
.1 7 7 (4 .5 )
.1 0 6 (2 .7 )
.0 9 (2 .3 )
.0 4 3 (1 .1 )
.0 2 7 (0 .7 )
.0 6 7 (1 .7 )
.0 5 7 (1 .3 )
.0 0 8 (0 .2 )
Dim en sions in in ches a nd(m illimet ers)
M a xim um R a ting s a nd E lectrica l C ha ra cte ristics
R a ting ntt te5 pe ra 00 u nle ss o the rwise spe cifie d.
a m bie a 2 m
ture
S ingle p ha se , ha lf w a ve , 60 H z, re sistiv e o r in du ctive loa d.
F or ca pa citive lo a d, de ra te curre nt by 2 0 %
Type N umber
M ax imum R ec urre nt P ea k R ev erse V olta ge
M ax imum R M S B ridge In pu t V olta ge
M ax imum D C B lock ing Volta ge
M ax imum A ve rage F orw ard (W ith h ea tsink N ote 2)
00
R ec tified C urre nt @ T
A
= 1 00
P ea k Fo rwar d S urge Cur rent ,
8. 3 ms S ingle H alf Sin e- wav e
S uper im pose d on R ated Loa d(JE D EC M etho d)
M ax imum In stan tane ous Fo rwar d V olta ge @ 0. 4A D C
M ax imum D C R ev erse C urre nt @ T
J
= 25
at R ated D C B lock ing Volta ge @ T
J
= 12 5
Typic al J un ction C ap ac itanc e
pe r e lem en t(N ote 2)
Typic al T he rmal R es ista nce( N ote 3)
00
00
B1S
10 0
70
10 0
B2S
20 0
14 0
20 0
B4S
40 0
28 0
40 0
0. 8
B6S
60 0
42 0
60 0
B8S
80 0
56 0
80 0
B10S
10 00
70 0
10 00
U n its
V
V
V
A
A
30
1. 0
5. 0
50 0
15
75
-5 5 to +15 0
-5 5 to +15 0
V
uA
A'S
pF
°
C /
<
W
° C
° C > °
N o te
tora ge Tem pe ratu re R an ge T STG
S
s:
O pe ratin g Tem pe ratu re R an ge T J
N ote s: 1.M e a sure d a t 1 .0 M H z a nd a pp lied re ve rse vo lta ge o f 4 .0 V D C
2 . D evice m ou nte d o n 7 5m m X 75 m m X 1 .6 m m C u P late H e atsin k
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