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B1S_10

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size65KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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B1S_10 Overview

BRIDGE RECTIFIER DIODE

桥式整流二极管

B1S_10 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE

B1S_10 Preview

Download Datasheet
B1S~B10S
MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
MDI
VOLTAGE
100 to 1000Volts
CURRENT
0.5 Amperes
Recongnized File # E111753
FEATURES
• Plastic material used carries Underwriters Laboratory recognition 94V-O
• Low leakage
• Surge overload rating-- 30 amperes peak
• Ideal for printed circuit board
• Exceeds environmental standards of MIL-S-19500
• In compliance with EU RoHS 2002/95/EC directives
.051(1.3)
.067(1.7)
.035(0.9)
Unit: inch(mm)
.275(7)MAX
.165(4.2)
.106(2.7)
.090(2.3)
.031(0.8)
.019(0.5)
.150(3.8)
• Case: Reliable low cost construction utilizing molded plastic technique
results in
• inexpensive product
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: Polarity symbols molded or marking on body
• Mounting Position: Any
• Weight: 0.0044 ounce, 0.1268 gram
.014(0.35)
.006(0.15)
MECHANICAL DATA
.193(4.9)
.057(1.3)
C .02(.5)
.008(.20)
.043(1.1)
.027(0.7)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi m um Re c ur re nt P e a k Re ve rs e Vo lta g e
Ma xi m um RM S B r i d g e Inp ut Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve r a g e F o rwa r d C urr e nt T
A
= 4 0
O
C
T
A
= 2 5
O
C ( No te 3 )
P e a k F o rwa r d S urg e C ur re nt : 8 .3 m s s i ng le ha lf s i ne - wa ve
s up e ri m p o s e d o n ra te d lo a d (J E D E C m e tho d )
I
2
t Ra ti ng fo r fus i ng ( t<8 .3 5 m s )
Ma xi m um F o rwa rd Vo lta g e D r o p p e r B r i d g e E le me nt a t 0 .5 A
Ma xi m um D C Re ve rs e C urre nt a t Ra te d D C
B lo c k i ng Vo lta g e
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 1 )
Typ i c a l the rm a l r e s i s ta nc e p e r le g (No te 2 )
T
J
= 2 5
O
C
T
J
= 1 2 5
O
C
S YM B OL
V
RRM
V
RM S
V
DC
I
F (AV )
I
F S M
I
2
t
V
F
I
R
C
J
R
θJ
A
R
θJ
C
R
θJ
L
T
J
,T
S TG
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
B6S
600
420
600
.177(4.5)
B8S
800
560
800
B10S
1000
700
1000
.106(2.7)
.090(2.3)
UNITS
V
V
V
A
A
A
2
S
V
μ
A
pF
O
0 .5
0 .8 *
30
3 .7 3 5
1 .0
5 .0
500
25
120
50
48
-5 5 to + 1 5 0
C / W
Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
O
C
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. *R-load on alumina subtrate
June 28,2010-REV.01
PAGE . 1
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