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B1ST/R13

Description
Bridge Rectifier Diode, 1 Phase, 0.8A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MDI, 4 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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B1ST/R13 Overview

Bridge Rectifier Diode, 1 Phase, 0.8A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MDI, 4 PIN

B1ST/R13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation1.4 W
Maximum repetitive peak reverse voltage100 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

B1ST/R13 Preview

Download Datasheet
B1S~B10S
MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
100 to 1000Volts
CURRENT
0.8 Amperes
Recongnized File # E111753
FEATURES
• Plastic material used carries Underwriters Laboratory recognition 94V-O
0.031(0.8)
0.019(0.5)
0.275(7.0)MAX
0.165(4.2)
0.150(3.8)
0.106(2.7)
0.090(2.3)
0.106(2.7)
0.090(2.3)
0.193(4.9)
0.177(4.5)
0.067(1.7)
0.057(1.3)
C 0.02(0.5)
0.051(1.3)
0.035(0.9)
0.043(1.1)
0.027(0.7)
• Low leakage
• Surge overload rating-- 30 amperes peak
• Ideal for printed circuit board
• Exceeds environmental standards of MIL-S-19500
• In compliance with EU RoHS 2002/95/EC directives
• Case: Reliable low cost construction utilizing molded plastic technique
results in
• inexpensive product
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: Polarity symbols molded or marking on body
• Mounting Position: Any
• Weight: 0.0044 ounce, 0.1268 gram
0.014(0.35)
0.006(0.15)
0.008(0.20)
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PA R A ME TE R
Ma xi m um Re c ur r e nt P e a k R e ve r s e Vo lt a g e
Ma xi m um RM S B r i d g e Inp ut Vo lt a g e
Ma xi m um D C B lo c k i ng Vo lt a g e
Ma xi m um A ve r a g e F o r wa r d
C ur r e nt T
A
= 5 5
O
C
T
A
= 25
O
C
S YM B O L
V
R RM
V
RMS
V
R
I
F (A V )
I
F S M
P
D
I
2
t
V
F
I
R
C
J
( No te 2 )
R
θJ
A
R
θJ
L
T
J
, T
S TG
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0 .5
0 .8
30
1 .4
B6S
600
420
600
B8S
800
560
800
B 10S
1000
700
1000
UNITS
V
V
V
A
A
W
A
2
S
V
μ
A
pF
O
P e a k F o r wa r d S ur g e C ur r e nt : 8 . 3 m s s i ng le ha lf s i ne - wa ve
s up e r i mp o s e d o n r a t e d lo a d ( J E D E C m e tho d )
P o we r D i s s i p a t i o n a t T
A
= 2 5
O
C
I
2
t Ra t i ng f o r f us i ng ( t <8 . 3 5 m s )
Ma xi m um F o r wa r d Vo lt a g e D r o p p e r B r i d g e E le m e nt a t 0 . 5 A
Ma xi m um D C Re ve r s e C ur r e nt a t Ra t e d D C
B lo c k i ng Vo lta g e
Typ i c a l J unc t i o n c a p a c i t a nc e ( No t e 1 )
Typ i c a l t he r ma l r e s i s t a nc e
T
J
= 2 5
O
C
T
J
= 1 2 5
O
C
3 .7 3 5
1 .0
5 .0
500
25
85
20
-5 5 to +1 5 0
C / W
O
Op e r a ti ng J unc t i o n a nd S t o r a g e Te m p e r a tur e Ra ng e
C
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2. Thermal resistance from junction to ambient mounted mounted on 5cmX6cm P.C.B. with minimum copper pads.
March 31,2011-REV.02
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