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B0540

Description
Schottky diodes
CategoryDiscrete semiconductor   
File Size3MB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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B0540 Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: B0540


product features:


Low Forward Voltage Drop


Guard Ring Construction for Transient Protection


High Conductance -


Also Available in Lead Free Version



Product parameters:


Pd dissipated power: 410mW


Io rectified current: 500mA


VR reverse working voltage: 40V


VF forward buck: 0.62V


IR reverse current: 20uA


Trr Forward recovery time:



Package: SOD-123

B0540 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B0520LW/B0530W/B0540W
SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
High Conductance
Also Available in Lead Free Version
MARKING: B0520LW:SD
B0530W: SE
B0540W: SF
Maximum Ratings @Ta=25℃
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS reverse voltage reverse voltage (DC)
Average rectified output current
Forward surge current peak
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature
Voltage rate of change
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
P
D
R
θJA
T
j
T
STG
dv/dt
14
20
0.5
5.5
500
250
150
-55~+150
1000
28
V
A
A
mW
℃/W
V/μS
20
30
40
B0520LW
B0530W
B0540W
SOD-123
+
-
Unit
V
Electrical Characteristics @Ta=25℃
Parameter
Minimum
reverse
breakdown voltage
Symbol
B0520LW
20
V
(BR)R
--
--
V
F1
Forward voltage
V
F2
V
F3
Reverse current
I
R1
I
R2
I
R3
Reverse current
I
R4
I
R5
Capacitance between terminals
C
T
0.32
0.385
--
75
--
250
--
--
--
B0530W
--
30
--
0.375
0.430
--
--
20
--
130
--
--
B0540W
--
--
40
--
0.510
0.62
--
--
10
--
20
170
pF
μA
μA
V
V
Unit
Conditions
I
R
=250μA
I
R
=200μA
I
R
=20μA
I
F
=0.1A
I
F
=0.5A
I
F
=1A
V
R
=10V
V
R
=15V
V
R
=20V
V
R
=30V
V
R
=40V
V
R
=0,f=1MHz
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