AZ23C6V8 datasheet, PDF - EEWORLD Datasheet

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AZ23C6V8: DescriptionZener Diode, 6.8V V(Z), 5%, 0.3W; CategoryDiscrete semiconductor diode; File Size532KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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AZ23C6V8 Overview

Zener Diode, 6.8V V(Z), 5%, 0.3W

AZ23C6V8 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	JCET
Reach Compliance Code	unknown
ECCN code	EAR99
Diode type	ZENER DIODE
Maximum dynamic impedance	8 Ω
Maximum operating temperature	150 °C
Maximum power dissipation	0.3 W
Nominal reference voltage	6.8 V
surface mount	YES
Maximum voltage tolerance	5%
Working test current	5 mA

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diode

FEATURES

AZ23C2V7-AZ23C39

ZENER DIODE

∙

Dual zeners in common anode configuration.

300mW power dissipation rating.

Ideally suited for automatic insertion.

△Vz

for both diodes in one case is ≤5%.

Common cathode style available see DZ series.

Also available in lead free version.

SOT-23

∙

Maximum Ratings(T

= 25℃ unless otherwise specified)

Characteristic

Forward Voltage

Power Dissipation

Thermal Resistance

from

Junction to Ambient

Junction

Temperature

Storage Temperature Range

@ I

= 10mA

Symbol

θJA

STG

Value

0.9

300

417

150

-55~+150

Unit

℃

B,Oct,2013

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