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AS2306

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 40mΩ @ 4A, 4.5V Maximum power dissipation ( Ta=25°C): 1.2W Type: N-channel N-channel, 20V, 4A, 60mΩ@2.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,3 Pages
ManufacturerFORMOSAMS
Websitehttp://www.formosagr.com/
FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.
Download Datasheet Parametric View All

AS2306 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 40mΩ @ 4A, 4.5V Maximum power dissipation ( Ta=25°C): 1.2W Type: N-channel N-channel, 20V, 4A, 60mΩ@2.5V

AS2306 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C4A
Gate-source threshold voltage1.5V @ 250uA
Drain-source on-resistance40mΩ @ 4A,4.5V
Maximum power dissipation (Ta=25°C)1.2W
typeN channel

AS2306 Preview

Download Datasheet
AS2306
N-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
FEATURE
TrenchFET Power MOSFET
SOT-23
1. GATE
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
2. SOURCE
3. DRAIN
MARKING: A 6
Maximum ratings (T
a
=25℃ unless otherwise noted)
Characteristic
特性參數
Drain-Source V oltage
漏極-源極電壓
Gate- Source V oltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Total Device Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Solder Temperature/Solder Time
焊接溫度/焊接時間
Storage Temperature
儲存溫度
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
P
D
T
J
T/t
T
stg
Max
最大值
20
+10
4
15
1200
150
260/10
-55to+150
Unit
單½
V
V
A
A
mW
℃/S
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
AS-3150036
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