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AO3401A

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 1.3V @ 250uA Drain-source on-resistance: 65mΩ @ 4.2A, 10V Maximum power dissipation (Ta=25°C): 350mW Type: P-channel -
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size4MB,4 Pages
ManufacturerUMW(Guangdong Youtai Semiconductor Co., Ltd.)
Websitehttp://www.umw-ic.com/

UMW is a leading provider of LDOs, MOSFETs, DC/DC, RS-232, RS-485, ESD/TVS, optocouplers, logic circuits, temperature sensor from mainland China. UTD's solutions enable low-risk development, lower overall system cost, and faster time-to-market for a variety of global applications.

Download Datasheet Parametric View All

AO3401A Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 1.3V @ 250uA Drain-source on-resistance: 65mΩ @ 4.2A, 10V Maximum power dissipation (Ta=25°C): 350mW Type: P-channel -

AO3401A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C4.1A
Gate-source threshold voltage1.3V @ 250uA
Drain-source on-resistance65mΩ @ 4.2A,10V
Maximum power dissipation (Ta=25°C)350mW
typeP channel

AO3401A Preview

Download Datasheet
UMW
SMD Type
Features
V
DS (V)
=-30V
I
D
=-4.2 A (V
GS
=-10V)
R
DS(ON)
55mΩ (V
GS
=-10V)
R
DS(ON)
70mΩ (V
GS
=-4.5V)
R
DS(ON)
120mΩ (V
GS
=-2.5V)
R
P-Channel Enhancement
MOSFET
UMW AO3401A
M SFET
SOT–23
1. GATE
2. SOURCE
3. DRAIN
D
G
S
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t
10s
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction and Storage Temperature Range
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-30
±12
-4.2
-3.5
-30
1.4
1
90
125
60
150
-55 to 150
℃/W
W
A
Unit
V
www.umw-ic.com
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