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AME8816AEDV180Z

Description
1.5A CMOS LDO
CategoryPower/power management    The power supply circuit   
File Size230KB,18 Pages
ManufacturerAnalogMicroElectronics,Inc.(AME)
AMT was founded in Taiwan in November 2000 and merged into AMT Microelectronics, Inc., a US company located in Silicon Valley, California, USA. Its stock was officially listed for public trading in March 2004.
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AME8816AEDV180Z Overview

1.5A CMOS LDO

AME8816AEDV180Z Parametric

Parameter NameAttribute value
MakerAnalogMicroElectronics,Inc.(AME)
package instruction,
Reach Compliance Codecompli
ECCN codeEAR99

AME8816AEDV180Z Preview

Download Datasheet
AME
AME8816
n
General Description
The AME8816 family of positive, linear regulators fea-
ture low quiescent current (45µA typ.) with low dropout
voltage, making them ideal for battery applications.
Output voltages are set at the factory and trimmed to
1.5% accuracy.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" operating conditions.
In applications requiring a low noise, regulated supply,
place a 1000pF capacitor between Bypass and Ground.
The AME8816 is stable with an output capacitance of
4.7µF or greater.
1.242V
R2
GND
1.5A CMOS LDO
n
Functional Block Diagram
(Fixed Versions)
IN
OUT
Overcurrent
Shutdown
Thermal
Shutdown
R1
BYPASS
AMP
EN
n
Features
l
Very Low Dropout Voltage
l
Guaranteed 1.5A Output
l
Accurate to within 1.5%
l
45µA Quiescent Current Typically
l
Over-Temperature Shutdown
l
Current Limiting
l
Short Circuit Current Fold-back
l
Noise Reduction Bypass Capacitor (Fixed
Versions)
l
Power-Saving Shutdown Mode
l
Low Temperature Coefficient
l
Adjustable Version
l
All AME’s Lead Free Products Meet RoHS
Standards
(Adjustable Version)
IN
OUT
Overcurrent
Shutdown
Thermal
Shutdown
AMP
R1
EN
ADJ
(external)
1.242V
R2
(external)
GND
n
Typical Application
IN
IN
OUT
OUT
AME8816
BYP
GND
EN
n
Applications
l
Instrumentation
l
Portable Electronics
l
Wireless Devices
l
PC Peripherals
l
Battery Powered Widgets
Rev.H.04
C1
1µF
C2
1000pF
C3
4.7µF
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