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AF2N60S

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 2A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.4Ω @ 1A, 10V Maximum power consumption Dispersion (Ta=25°C): 23W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,8 Pages
ManufacturerANBON SEMICONDUCTOR
Websitehttp://www.formosagr.com/

Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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AF2N60S Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 2A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.4Ω @ 1A, 10V Maximum power consumption Dispersion (Ta=25°C): 23W(Tc) Type: N-channel

AF2N60S Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C2A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance4.4Ω @ 1A,10V
Maximum power dissipation (Ta=25°C)23W(Tc)
typeN channel
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