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ABSR210

CategoryDiscrete semiconductor    Rectifier bridge   
File Size438KB,3 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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ABSR210
ABSR210
SINGLE PHASE2.0A MPS. GLASS PASSIVATEDFAST BRIDGE RECTIFIERS
FEATURE
.Glass
passivated junction.
.Ideal
for printed circuit board.
.Reliable
low cost construction utilizing molded
plastic technique.
.High
surge current capability.
.High
temperature soldering guaranteed:
260℃/10 seconds at terminals.
.Small
size, simple installation.
. 4.
165( 2)
. 3.
150( 8)
ABS
. .
010(25)
. .
006(15)
. 6.
260( 60)
. 6.
248( 30)
-
+
. 4.
181( 6)
. 4.
173( 4)
. .
006(15)
. .
002(05)
. .
033(75)
. .
022(55)
. 5.
201( 1)
. 4.
193( 9)
. .
030(75)
. .
018(45)
R. R.
004( 1)
MECHANICAL DATA
.Case:
Molded plastic
.Epoxy:
UL 94V-0 rate flame retardant
.Lead:
MIL-STD- 202E, Method 208 guaranteed
.Polarity:
As marked
. .
028(70)
. .
020(50)
. 1.
059( 5)
. 1.
051( 3)
Dimensions in inches and (millimeters)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.For capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYM
BOL
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward rectified Current
Peak Forward Surge Current times at 8.3ms single half
sine-wave superimposed on rate load (JEDEC method)
Maximum Instantaneous Forward Voltage at 0.8A DC
Maximum DC Reverse Current
at rated DC blocking voltage
I
2
t Rating for Fusing (t﹤8.3ms)
Typical Junction Capacitance Per Leg (Note2)
Typical Thermal Resistance (Note3)
Storage Temperature
Operating Junction Temperature
@T
J
=25°C
@T
J
=125°C
ABSR210
1000
700
1000
2.0
50
1.25
5.0
200.0
500
10.37
15
65
22
-55 to +150
-55 to +150
units
V
V
V
A
A
V
μA
nS
A
2
Sec
pF
°C /W
°C
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
I
2
t
C
J
R
JA
R
JC
T
STG
T
J
Maximum Reverse Recovery Time (Note 1)
Note:
1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3.Thermal Resistance from Junction to Ambient mounted on P.C.B with 0.2×0.2″ (5×5mm) copper pads
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