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A94-TA

Description
Rated power: 625mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 400V Transistor type: PNP PNP, Vceo=-400V, Ic=-0.2A
CategoryDiscrete semiconductor    triode   
File Size420KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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A94-TA Overview

Rated power: 625mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 400V Transistor type: PNP PNP, Vceo=-400V, Ic=-0.2A

A94-TA Parametric

Parameter NameAttribute value
rated power625mW
Collector current Ic200mA
Collector-emitter breakdown voltage Vce400V
Transistor typePNP

A94-TA Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
A94
TRANSISTOR (PNP)
1.EMITTER
FEATURES
High Breakdown Voltage
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To ambient
Junction Temperature
Storage Temperature
Value
-400
-400
-5
-0.2
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)
f
T
Test
conditions
Min
-400
-400
-5
-0.1
-5
-0.1
80
70
60
80
-0.2
-0.3
-0.75
50
V
V
V
MHz
300
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-400V,I
E
=0
V
CE
=-400V,I
B
=0
V
EB
=-4V,I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-10V, I
C
=-50mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-20V, I
C
=-10mA,f=30MHz
CLASSIFICATION OF h
FE(1)
RANK
RANGE
A
80-100
B1
100-150
B2
150-200
C
200-300
B,Dec,2010
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