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840

Description
MOSFET
CategoryDiscrete semiconductor   
File Size205KB,7 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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840 Overview

MOSFET

Features

Product Name: MOSFET


Product model: 840


Product Description:


This Power MOSFET is produced using


advanced planar stripe DMOS technology.


This advanced technology has been especially


tailored to minimize on-state resistance, provide


superior switching performance, and withstand


high energy pulse in the avalanche and


commutation mode. These devices are well suited


for high efficiency switched mode power supplies,


active power factor correction based on half


bridge topology.



parameter:


Drain-Source Voltage VDS 500 V


Drain Current-Continuous ID 9 A


Drain Current -Pulsed (Note 1) IDM 36 A


Maximum Power Dissipation PD 139W


VGS Gate-to-Source Voltage ± 30 V


EAS Single PulseAvalanche Energy 360 mJ


Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃


dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns


Package: TO-220

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Download Datasheet
840
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using
advanced planar stripe DMOS technology.
This advanced technology has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand
high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency switched mode power supplies,
active power factor correction based on half
bridge topology.
500V
0.85 Ω
9.0A
V
DSS
R
DS(ON
)
I
D
Features
• 9.0A, 500V, RDS(on) = 0.85Ω @VGS = 10 V
• Low gate charge ( typical 30nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
840
T0-220
OGFD
Ordering Information
PART NUMBER
PACKAGE BRAND
www.goford.cn
TEL:0755-86350980 FAX:0755-86350963
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