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5KP51

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size177KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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5KP51 Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP51 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
Breakdown voltage nominal value62.7 V
Maximum clamping voltage91.1 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage51 V
surface mountNO
Base Number Matches1

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5KP SERIES
瞬变电压抑制二极管
Transient Voltage Suppressor Diodes
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
P
PP
5000W
V
BR
5.0V-188V
1.0(25.4)
MIN
R-6
.360(9.10)
.340(8.60)
1.0(25.4)
MIN
.052(1.32)
.047(1.20)
DIA
■用途  Applications
 
●箝½电压用  Clamping
Voltage
.360(9.10)
.340(8.60)
DIA
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
 
Limiting Values (Absolute Maximum Rating)
参数名称
Item
最大损耗功率
Peak power dissipation
最大脉冲电流
Peak pulse current
功率损耗
Power dissipation
最大正向浪涌电流
Peak forward surge current
工½结温和存储温度范围
Operating junction and
temperature range
符号
Symbol
PPPM
IPPM
PD
IFSM
storage TJ,TSTG
单½
Unit
W
A
W
A
条件
Conditions
在10/1000us 波½下测试
with a 10/1000us waveform
在10/1000us 波½下测试
with a 10/1000us waveform
无限散热片@
TL=75℃
on infinite heat sink at TL=75℃
8.3ms正弦半波,仅单向型
8.3 ms single half sine-wave unidirectional only
最大值
Max
5000
见下面表格
See Next Table
8.0
600
-55 to +175
■电特性 (T
a=25
除非另有规定)
Electrical Characteristics(Ta=25
Unless otherwise specified)
参数名称
Item
最大瞬间正向电压(1)
Maximum instantaneous forward
Voltage(1)
符号
Symbol
VF
单½
Unit
V
条件
Conditions
在100A下测试,仅单向型
at 100A for unidirectional only
最大值
Max
3.5
备注:Notes:
1.
测试在8.3ms正弦半波或相等的方波下,占空系数=最大4个脉冲每分钟
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 0238
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技½股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com
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