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47N60YS

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 47A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 90mΩ @ 15.6A, 10V Maximum power consumption Dispersion (Ta=25°C): 183W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size488KB,7 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
Download Datasheet Parametric View All

47N60YS Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 47A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 90mΩ @ 15.6A, 10V Maximum power consumption Dispersion (Ta=25°C): 183W(Tc) Type: N-channel

47N60YS Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C47A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance90mΩ @ 15.6A,10V
Maximum power dissipation (Ta=25°C)183W(Tc)
typeN channel

47N60YS Preview

Download Datasheet
47N60YS
47 Amps,600 Volts N-Channel Super Junction Power MOSFET
FEATURE
47A,600V,R
DS(ON)MAX
=90mΩ@V
GS
=10V/15.6A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-247
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
T
J
,T
STG
T
L
47N60YS
600
±20
47
132
720
-55 to +150
260
10
1.1
UNIT
V
A
mJ
lbf·in
N·m
Thermal
Parameter
Characteristics
Symbol
R
thJC
T
C
=25℃
P
D
47N60YS
0.68
183
Units
℃/W
W
Maximum Junction-to-Case
Maximum Power Dissipation
Version1.0-2015.2
www.perfectway.cn
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