3KP110C_R2_00001 datasheet, PDF

3KP110C_R2_00001: DescriptionTrans Voltage Suppressor Diode, 3000W, 110V V(RWM), Bidirectional, 1 Element, Silicon,; CategoryDiscrete semiconductor diode; File Size104KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

3KP110C_R2_00001 Overview

Trans Voltage Suppressor Diode, 3000W, 110V V(RWM), Bidirectional, 1 Element, Silicon,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	O-PALF-W2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, UL RECOGNIZED
Maximum breakdown voltage	154.5 V
Minimum breakdown voltage	122 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	110 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

The interests behind it: an in-depth analysis of the SP rectification.: In order to cooperate with the Ministry of Information Industry's "Special Activities on Governing and Regulating Mobile Information Service Fees and Charging Behaviors", China Mobile has recently lau...; kankan RF/Wirelessly

What are the two parts of RFID?: Radio frequency identification (RFID) technology is a contactless automatic identification technology. Its basic principle is to use radio frequency signals and their spatial coupling and transmission...; Jacktang Wireless Connectivity

How to turn off the keypad: [size=14px]Let me describe my problem. There is a main form, which is WINDOW. Click the query button of the main form, and a subform pops up. [/size] [size=14px]There is an edit box control on the sub...; chenbingjy Real-time operating system RTOS

Switching Noise - EMC: [align=left]Electromagnetic interference EMI can be roughly divided into two types: "conducted noise" and "radiated noise". Among them, conducted noise can be divided into "differential mode (normal m...; alan000345 Power technology

Power supply design for low voltage systems: Low Voltage PLD/FPGA Power Supply DesignDue to the semiconductor manufacturing process, low-voltage devices have lower costs and better performance than traditional 5V devices. In addition, the I/O pi...; wenhui Power technology

Mobile Phone Radiation Survey Research Report: ??The National Academy of Engineering of the United States recently announced the list of new academicians, and a total of three Chinese scholars were selected. In the previous issue of this magazine,...; backstreets RF/Wirelessly

Popular Components