EEWORLDEEWORLDEEWORLD

Part Number

Search

3DA5200A

Description
NPN transistor
CategoryDiscrete semiconductor   
File Size116KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

3DA5200A Overview

NPN transistor

Features

Product Name: NPN Transistor


Product model: 3DA5200A



Product parameters:


Pcm (maximum dissipated power): 3000mW


Ic (collector current): 15000mA


BVcbo (collector-base breakdown voltage): 200V


BVceo (Collector-Emitter Breakdown Voltage): 200V


BVebo (emitter-base breakdown voltage): 5V


hFE (current gain): Min: 55, Max: 160


VCE (sat) saturation voltage drop: 3V


fT (transition frequency): 30+MHz



Package: TO-3P

3DA5200A Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
TO – 3P
3DA5200A
TRANSISTOR (NPN)
1. BASE
FEATURES
High Breakdown Voltage
High Current and Power Capacity
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
200
5
15
3
42
150
-55~+150
Unit
V
V
V
A
W
℃/W
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
200
200
5
5
5
55
35
3
1.5
360
30
V
V
pF
MHz
160
Typ
Max
Unit
V
V
V
μA
μA
I
C
=100µA,I
E
=0
I
C
=50mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=200V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=7A
I
C
=8A,I
B
=800mA
V
CE
=5V, I
C
=7A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=1A
CLASSIFICATION OF h
FE (1)
RANK
RANGE
R
55-110
O
80-160
A,Dec,2010
Xunwei IMX6 development board non-device tree source code compilation environment construction (I)
This section applies to the system compilation of ITOP-IMX6Q (commercial grade 2G+16G), ITOP-IMX6Q (industrial grade 1G+8G), and ITOP-IMX6D (commercial grade 1G+8G)with kernel version 3.0.35.13.1 Comp...
遥寄山川 ARM Technology
Execution process before keil main
After the hardware is reset, the first step is to execute the reset handler. The entry of this program is in the startup code (by default). Here is an excerpt of the reset processing entry code of cor...
Aguilera Microcontroller MCU
I need help from a great God to look at this circuit diagram, thank you very much
I recently bought an air purifier and wanted to achieve two functions: 1. Start the machine by incoming call without pressing the power button. 2. The purifier originally has the function of adjusting...
阿迪eddy Integrated technical exchanges
FPGA Global Clock Constraints (Xilinx)
FPGA Global Clock Constraints (Xilinx)...
zxopenljx EE_FPGA Learning Park
The 2020-2021 ON Semiconductor and Avnet IoT Innovation Design Competition awards have been announced!
[Competition Details] 2020-2021 ON Semiconductor and Avnet IoT Innovation Design Competition【Written in front】 Thanks to all the netizens who participated in the ON Semiconductor and Avnet IoT Innovat...
EEWORLD社区 onsemi and Avnet IoT Innovation Design Competition

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号