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3400H

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.45V @ 250uA Drain-source on-resistance: 28mΩ @ 2A, 10V Maximum power dissipation ( Ta=25°C): 1.4W Type: N channel N channel, 30V, 5.8A, 27mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,6 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
Download Datasheet Parametric View All

3400H Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.45V @ 250uA Drain-source on-resistance: 28mΩ @ 2A, 10V Maximum power dissipation ( Ta=25°C): 1.4W Type: N channel N channel, 30V, 5.8A, 27mΩ@10V

3400H Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C5.8A
Gate-source threshold voltage1.45V @ 250uA
Drain-source on-resistance28mΩ @ 2A,10V
Maximum power dissipation (Ta=25°C)1.4W
typeN channel

3400H Preview

Download Datasheet
GOFORD
Description
The 3400H uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge.This device is suitable
for use as a load switch and PWM applications.
3400H
D
G
Genera Features
S
V
DSS
30V
@ 10V (Typ) @ 4.5V (Typ) @ 2.5V (Typ)
R
DS(ON)
27
m
R
DS(ON)
30
m
R
DS(ON)
40
m
I
D
5.8
A
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
Application
●Load
switch
●PWM
application
SOT-23
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
30
±12
5.8
20
1.4
-55 To 150
Unit
V
V
A
A
W
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
89
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
30
-
-
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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