Plastic-Encapsulate Transistors
FEATURES
•
Collector current up to 5A
•
Collector-Emitter voltage up to 20V
2SD965
(NPN)
Marking: D965
Maximum Ratings (
Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tstg
Value
40
20
7
3
Unit
V
V
V
A
W
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
0.5
-55to +150
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
Collector-base breakdown voltage
Symbol
V
CBO
unless otherwise specified)
Test conditions
I
C
=100μA,
I
E
=0
Min
40
Typ
Max
Unit
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
I
C
=1mA ,I
B
=0
I
E
=10μA,
I
C
=0
V
CB
=10V, I
E
=0
V
EB
=7V,I
C
=0
I
C/
I
B
=3A/0.1A
V
CE
=2V, I
C
=1mA
20
7
0.1
0.1
1
200
230
150
150
50
800
V
V
uA
uA
V
DC current gain(note)
h
FE
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
Current gain bandwidth product
Output Capacitance
CLASSIFICATION OF h
FE
Rank
Range
f
T
C
ob
V
CE
=6V,I
C
=50mA
V
CB
=20V, f=1MHz ,I
E
=0A
MHz
pF
Q
230 -380
R
340-600
S
560-800
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
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