2SD2012 datasheet, PDF - EEWORLD Datasheet

2SD2012: Description60V 3A 2W TO-220 Bipolar Transistor; CategoryDiscrete semiconductor; File Size16KB，1 Pages; ManufacturerShanghai Jiaxing Electronics Co.,Ltd.

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60V 3A 2W TO-220 Bipolar Transistor

Features

Product Name: 60V 3A 2W TO-220 Bipolar Transistor

Product model: 2SD2012

Features:

Technical Parameters:

POLARITY:NPN

PIN ARRAY Pin: BCE

Pcm power: 2000mW

Ic current: 3000mA

BVCBO collector breakdown voltage: 60V

BVEBO emitter reverse breakdown voltage: 7V

hFE magnification MIN: 100

hFE amplification factor MAX: 320 (Vce=5V, Ic=500mA)

VCE(sat) saturation voltage drop: 1V (Ic=2000mA, Ib=200mA)

Ft characteristic frequency: 3MHz

Package: TO-220

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