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2SC4672R

CategoryDiscrete semiconductor    triode   
File Size486KB,3 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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2SC4672
NPN-Silicon
General use Transistors
1W
、1.5A、25V
4
1
2
3
Applications
:Can
be used for switching and amplifying in various
electrical and electronic circuit.
SOT-89
Maximum ratings
Parameters
Collector-emitter voltage (I
B
=0)
Collector-base voltage(I
E
=0)
Emitter-base voltage(I
C
=0)
Collector current
Total
power(T
A
=25℃)
*
Junction temperature
Storage temperature
dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
jm
T
stg
Rating
25
40
6
1.5
1
150
-55½150
Unit
V
V
V
A
W
* Device is mounted on a printed circuit board.
Electrical characteristics(Unless otherwise specified,T
A
=25℃)
Parameters
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Forward current
transfer ratio
Q
h
FE
R
I
CBO
V
CE
sat
f
T
V
CB
=35V,I
E
=0
I
C
=800mA,
B
=80mA
I
I
C
=50mA,
CE
=10V,
V
f=100MHz
V
CE
=1V;I
C
=100mA
180
100
390
100
0.5
nA
V
MHz
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Test condition
I
C
=2mA,I
B
=0
I
C
=100µA,I
E
=0
I
E
=100µA,I
C
=0
Min.
25
40
6
120
typ
Max.
270
Unit
V
V
V
Collector-base current
Collector-emitter saturation voltage
Characteristic frequency
REV.08
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