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2SC2715

Description
NPN transistor
CategoryDiscrete semiconductor   
File Size796KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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2SC2715 Overview

NPN transistor

Features

Product Name: NPN Transistor


Product model: 2SC2715



Product parameters:


Pcm (maximum power dissipation): 350mW


Ic (collector current): 50mA


BVcbo (collector-base breakdown voltage): 35V


BVceo (Collector-Emitter Breakdown Voltage): 30V


BVebo (emitter-base breakdown voltage): 4V


hFE (current gain): Min:40, Max:240


VCE (sat) saturation voltage drop: 0.4V


fT (transition frequency): 100MHz



Package: SOT-23

2SC2715 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC2715
FEATURES
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
High Power Gain
Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
4
50
350
150
-55-150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Power Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
Test conditions
I
C
=
10
μA,
I
E
=0
I
C
=
1
mA, I
B
=0
I
E
=
10
μA,
I
C
=0
V
CB
=35V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
10
mA, I
B
=
1
mA
V
CE
=10V, I
C
=
1
mA
V
CE
=
6
V, I
C
=
1
mA, f=
10.7M
HZ
100
27
Min
Typ
Max
Unit
V
V
V
35
30
4
0.1
0.1
40
240
0.4
1
400
33
μA
μA
V
V
MHz
dB
f
T
Gpe
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
R
40-80
RR1
O
70-140
RO1
Y
120-240
RY1
A,May,2011
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