2SC2714Y datasheet, PDF - EEWORLD Datasheet

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2SC2714Y: CategoryDiscrete semiconductor triode; File Size507KB，1 Pages; ManufacturerSHIKUES; Websitehttp://www.shike.tw; Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.

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2SC2714Y

MAXIMUM RATINGS

Parameter

Symbol

CEO

CBO

EBO

tot

(th)ja

stg

Rating

3.0

225

556

150

-55~150

Unit

℃/W

℃

GENERAL PURPOSE

TRANSISTOR NPN SILICON

225mW、50mA、20V

Collector-Emitter Voltage

Collector-Base Voltage

Emitter–Base Voltage

Collector Current

Total Device Dissipation(T

=25℃)

Thermal Resistance Junction to Ambient

Junction Temperature(Max)

Storage Temperature

SOT-23

DEVICE MARKING

2SC2714Y=QY

ELECTRICAL CHARACTERISTICS

（T

=25℃）

Parameter

Symbol

(BR)CEO

Test condition

=3mA，I

=100A，I

=15V，I

=50mA，V

=1.0V

=10mA，I

=1.0mA

=10mA，I

=1.0mA

=1.0V， I

=3.0mA

Min

3.0

—

600

Typ

—

Max

—

0.05

—

0.40

1.0

—

Unit

μA

—

Breakdown Voltage

(BR)CBO

(BR)EBO

Collector-Cutoff Current

DC Current Gain

CBO

CE(sat)

BE(sat)

Collector- Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Transition-Frequency

SOT-23

min

2.80

1.20

0.89

0.30

1.80

0.01

0.08

0.45

0.89

2.10

0.42

SOT-23

max

3.04

1.40

1.13

0.50

2.04

0.10

0.18

0.60

1.02

2.50

0.60

REV.08

1 of

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