EEWORLDEEWORLDEEWORLD

Part Number

Search

2SC2714

Description
NPN transistor
CategoryDiscrete semiconductor   
File Size910KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

2SC2714 Overview

NPN transistor

Features

Product Name: NPN Transistor


Product model: 2SC2714



Product parameters:


Pcm (maximum dissipated power): 100mW


Ic (collector current): 20mA


BVcbo (collector-base breakdown voltage): 40V


BVceo (Collector-Emitter Breakdown Voltage): 30V


BVebo (emitter-base breakdown voltage): 4V


hFE (current gain): Min: 40, Max: 200


fT (transition frequency): 550+MHz



Package: TO-220-3L

2SC2714 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC2714
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
FEATURES
Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)
MAXIMUM RATINGS (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
100
125
-55-+125
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Test conditions
I
C
=10μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=18V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V,I
C
=1mA
V
CB
=6V,I
E
=0,f=1MHz
V
CE
=6V,I
c
=1mA,f=100MHZ
40
550
0.7
2.5
5
Min
40
30
4
0.5
0.5
200
MHz
pF
dB
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
R
40-80
QR
O
70-140
QO
Y
100-200
QY
A,May,2011
[GD32L233C] + 6. Use software SPI to drive OLED
[i=s]This post was last edited by chrisrh on 2022-2-19 16:05[/i]Using IO to simulate SPI to drive 0.96' OLED View datasheet:Select IO ports such as PB12/PB13/PB14/PB15 with hardware SPI1 function Driv...
chrisrh GD32 MCU
MicroPython oled displays Chinese characters and pictures
[i=s] This post was last edited by The Most Handsome on 2021-11-18 16:41[/i]Yesterday, when I was cleaning my house, I accidentally found the oled12864 small display screen that I bought when I was in...
是最帅的啊 MicroPython Open Source section
ADC Research of msp430F5438A
Since the ADC module is needed in the project, it is necessary to study the ADC module. This is the description of ADC on the first page of the msp430F5428A datasheet: 12-Bit Analog-to-Digital Convert...
fish001 Microcontroller MCU
15 yuan free shipping: high quality, Sensirion digital temperature and humidity sensor SHT31 (limited quantity, hurry up)
Previously, the forum held a review activity for this sensor development board from Sensirion (click here to view ), and this sensor was very popular.This sensor is also sold in the element11 mall. En...
nmg Sensor

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号