2SB649A(TO-126C) datasheet, PDF

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2SB649A(TO-126C): DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size247KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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Transistor

2SB649A(TO-126C) Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126C Plastic-Encapsulate Transistors

2SB649/2SB649A

TRANSISTOR

(PNP)

TO- 126C

FEATURES

Low Frequency Power Amplifier Complementary Pair

with 2SD669/A

MAXIMUM RATINGS (T

=25

℃

unless otherwise noted)

Symbol

CBO

CEO

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

2SB649

2SB649A

EBO

stg

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-120

-160

-5

-1.5

150

-55-150

℃

Value

-180

Unit

1. EMITTER

2. COLLECTOR

3. BASE

ELECTRICAL CHARACTERISTICS (T

=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

CE(sat)

unless

Test

otherwise

specified)

Min

Typ

Max

Unit

conditions

-1

mA,I

-10

mA,I

2SB649

2SB649A

-1m

A, I

-160

V,I

-4

V,I

=-5V,I

-150

2SB649

2SB649A

-5

V,I

-500

mA,I

-50

-5

V,I

-150

-5

V,I

-150

-10

V,I

=0,f=

MHz

-180

-120

-160

-5

-10

-1

-1.5

140

160-320

320

200

µA

DC current gain

MHz

CLASSIFICATION OF

Rank

Range

2SB649

2SB649A

FE(1)

60-120

100-200

A,Jun,2011

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