2SB1185
Plastic-Encapsulate Transistors
Features
Power dissipation
P
CM
:
2
W (Tamb=25℃)
PNP
TO-220
Collector current
I
CM
:
-3
A
Collector-base voltage
-60
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-50
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-40
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-3
V, I
C
=
-0.5
A
I
C
=
-2
A, I
B
=
-0.2
A
I
C
=
-2
A, I
B
=
-0.2
A
V
CE
=
-5
V, I
C
=
-0.5
A, f=
30
MHz
V
CB
=-10V, I
E
=0, f=
1
MHz
-60
-50
5
-1
-1
60
320
-1
-1.5
70
50
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
D
60-120
E
100-200
F
160-320
PCB Design
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