2SA940 datasheet, PDF - EEWORLD Datasheet

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2SA940: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size704KB，1 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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2SA940 Overview

Transistor

2SA940 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

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2SA940

Plastic-Encapsulate Transistors

Features

Power dissipation

: 1.5

W (Tamb=25℃)

PNP

TO-220

Collector current

: -1.5

Collector-base voltage

(BR)CBO

: -150

Operating and storage junction temperature range

, T

stg

: -55℃ to +150℃

1. BASE 2. COLLECTOR 3. EMITTER

ELECTRICAL CHARACTERISTICS (Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

CE(sat)

unless otherwise specified)

Test

conditions

MIN

TYP

MAX

UNIT

Ic=

-100

µA,

Ic=

-1

mA, I

-100

µA,

-120

V, I

-5

V, I

-10

V, I

-500

mA, I

-50

-10

V, I

-500

-10

V, I

-500

-10

V, I

=0, f=

MHz

-150

-5

-10

140

-1.5

-0.65

µA

MHz

-0.85

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