2N7002KDW_R2_00001 datasheet, PDF

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2N7002KDW_R2_00001: DescriptionSmall Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002KDW_R2_00001 Overview

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

2N7002KDW_R2_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	compli
Other features	ULTRA LOW RESISTANCE
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.115 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2N7002KDW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R

DS(ON)

, V

@10V,I

@500mA=3Ω

• R

DS(ON)

, V

@4.5V,I

@200mA=4Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• Lead free in compliance with EU RoHS 2011/65/EU directive

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-363 Package

• Terminals: Solderable per MIL-ST

D-750,Method 2026

• Approx. Weight: 0.0002 ounces, 0.006 grams

• Marking: K27

Maximum RATINGS and Thermal Characteristics (T

=25

C unless otherwise noted )

P a r a me t e r

Dr a i n- S o ur c e Vo lt a g e

G a t e - S o ur c e Vo l t a g e

Co nt i nuo us D r a i n C ur r e nt

P uls e d D r a i n C ur r e nt

S y mb o l

= 2 5

= 7 5

, T

STG

L i mi t

+20

11 5

800

200

120

-55 t o +150

625

Uni t s

M a ximum P o w e r D i s s i p a t i o n

O p e r a t ing J unc t i o n a nd S t o r a g e

Te mp e r a t ur e R a ng e

J unc t i o n- t o A mb i e nt T he r ma l R e s i s t a nc e

( P CB mo unt e d )

C/W

Note:1.Maximum DC current limited by the package

2.Surface mounted on FR4 board, t<10 sec

3.Pulse width<300us, Duty cycle<2%

May 25,2016REV.04

PAGE . 1

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