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2N7002DW_R2_00001

Description
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002DW_R2_00001 Overview

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

2N7002DW_R2_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionGREEN, PLASTIC PACKAGE-6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA LOW RESISTANCE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.115 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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2N7002DW
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=5Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case : SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 702
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E T E R
Dr a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo lt a g e
Co nt i nuo us D r a i n C ur r e nt
P uls e d Dr a i n Cu r r e nt
1)
S y mb o l
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
ST G
R
θJ
A
L imi t
60
+ 20
11 5
800
200
120
-55 t o + 150
625
Uni t s
V
V
mA
mA
mW
O
M a ximum P o w e r D i s s i p a t i o n
T
A
= 2 5
O
C
T
A
= 7 5
O
C
O p e r a t ing J unc t i o n a nd S t o r a g e Te mp e r a t ur e
Ra ng e
J unc t i o n- t o A mb ie nt T he r ma l R e s i s t a nc e
( P CB mo unt e d )
2
C
O
C/ W
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
April 7,2016-REV.03
PAGE . 1
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