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2N7002DWT/R7

Description
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS
CategoryDiscrete semiconductor    The transistor   
File Size107KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002DWT/R7 Overview

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

2N7002DWT/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.115 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS
This space-efficient device contains two electrically-isolated N-Channel
enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L)
package. This device is ideal for portable applications where board space is
at a premium.
SOT- 363
4
5
6
2
1
3
FEATURES
Dual N-Channel MOSFETS in Ultra-Small SOT-363 Package
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
Available in lead-free plating (100% matte tin finish)
6
5
4
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
1
2
3
MARKING CODE: 702
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Note 1. R
GS
< 20K ohms
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
T
stg
Value
60
60
20
115
200
-55 to 150
-55 to 150
Units
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 2)
Symbol
R
thja
Value
625
Units
°C/W
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
8/11/2005
Page 1
www.panjit.com
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