2N5401
2
Plastic-Encapsulate Transistors
PNP
TO-92
Features
Power dissipation
P
CM
: 0.625
W (Tamb=25℃)
Collector current
I
CM
: - 0.6
A
Collector-base voltage
V
(BR)CBO
: -160 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
1. EMITTER 2. BASE 3. COLLECTOR
unless otherwise specified)
Test
conditions
MIN
-160
-150
-5
-0.1
-0.1
80
80
50
-0.5
-1
V
V
250
TYP
MAX
UNIT
V
V
V
Ic= -100
µ
A, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -10
µ
A, I
C
=0
V
CB
= -120 V, I
E
=0
V
EB
= -4 V, I
C
=0
V
CE
= -5 V, I
C
=-1 mA
V
CE
= -5 V, I
C
= -10 mA
V
CE
= -5 V, I
C
=-50 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -50 mA, I
B
= -5 mA
V
CE
=-5V, I
C
=-10mA
µ
A
µ
A
Transition frequency
f
T
f
=30MHz
100
MHz
RF/Wirelessly
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