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2CW032091JL-R

Description
Zener Diode, 9.1V V(Z), 1.4%,
CategoryDiscrete semiconductor    diode   
File Size61KB,3 Pages
ManufacturerSilan
Websitehttp://www.silanic.com.cn/
Environmental Compliance
Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.
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2CW032091JL-R Overview

Zener Diode, 9.1V V(Z), 1.4%,

2CW032091JL-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSilan
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance10 Ω
Number of components1
Maximum operating temperature175 °C
Nominal reference voltage9.1 V
surface mountYES
Maximum voltage tolerance1.4%
Working test current5 mA
Base Number Matches1

2CW032091JL-R Preview

Download Datasheet
2CW032XXXJL-R
2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE
WITH ASYMMETRY LIMITS
DESCRIPTION
Ø
2CW032XXXJL-R series are low-power zener diode
chips for plastic package that fabricated in silicon
epitaxial planar technology.
Ø
The series is asymmetrical regulator voltage chips, that
is the upper limit and lower limit is asymmetrical, e.g.
Vz=3.0V chips: the upper limit is 3.25V, the lower limit Is
2.95V ,the specification design is better suitable for
user’ using habit.
s
Ø
The chip thickness is 180µm or 150µm. The top
electrode material is Al, and the back-side electrode
material is Au.
2CW032XXXJL-R CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS
Characteristics
Junction Temperature
Storage Temperature
Symbol
T
j
T
stg
Test conditions
----
----
Value
175
-55~+175
Unit
°C
°C
WAFER INFORMATION
Item
Wafer Size
Gross Dies
Die Size(La)
Top Pad Size(Lb)
Wafer Thickness
Top Metal / Thickness
Back Metal / Thickness
Passivation / Thickness
Scribe Line with
description
5Inch
100,000 dice/ wafer
320µm
180µm
180±20µm or 155±20µm
Al:2µm
Au :1.5µm
SiO2 :1.0µm
40µm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.03.17
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