25N06D&25N06G
POWER
Featutes
25A,60V,R
DS(ON)MAX
=0.036
Ω@V
GS
=10V/12.5A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
MOSFET
TO-251(IPAK)
25N06D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
TO-252(DPAK)
25N06G
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
J
,T
STG
T
L
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
25N06D&25N06G
60
±20
25
100
100
20
4
5.0
-55to+150
260
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
Thermal
Parameter
Characteristics
Symbol
R
th(J-c)
R
th(ch-c)
R
th(ch-a)
P
D
T
C
=25℃
25N06D&25N06G
2.5
2.5
62.5
50
Units
℃/W
℃/W
℃/W
W
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
Version1.0-2015.2
www.perfectway.cn
25N06D&25N06G
Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
BV
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Test Conditions
Mix
Typ
－
0.05
－
－
－
－
0.025
1296
117
87
Max
－
－
1
100
-100
3.0
0.036
－
－
－
Units
V
V/℃
uA
nA
nA
V
Ω
pF
pF
pF
Off C
haracteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
V
GS
=0V,I
D
=250uA
Reference to 25℃，
I
D
=250uA
V
DS
=48V,V
GS
=0V
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=10A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
60
－
－
－
－
1.0
－
－
－
－
On C
haracteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic C
haracteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
I
S
I
SM
V
SD
t
rr
Q
rr
I
S
=25A,V
GS
=0V
V
GS
=0V,I
S
=25A,
dI
F
/dt=100A/us,
(Note4)
V
DS
=30V,I
D
=18A,
V
GS
=4.5V, (Note4,5)
V
DD
=30V,I
D
=18A,
R
G
=3.3Ω
(Note4,5)
－
－
－
－
－
－
－
－
－
－
－
－
8
19
34
7
13
6.8
4
－
－
－
53
86
－
－
－
－
－
－
－
25
100
1.5
－
－
ns
ns
ns
ns
nC
nC
nC
Drain-Source Body Diode Charcteristics and Maximum Ratings
A
A
V
ns
uC
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature .
2. V
DD
=50V,L=0.5mH,R
g
=25Ω,I
AS
=25A , starling,T
J
=25℃.
3.
I
SD
≤I
D
,dI/dt=_A/us,V
DD
≤BV
DSS
,starting T
J
=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5.
Repetitive rating; pulse width limited by maximum junction temperature.
Version1.0-2015.2
www.perfectway.cn
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