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1SMB5953

Description
150 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size51KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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150 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA

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1SMB5926 THRU 1SMB5956
SURFACE MOUNT SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
FEATURES
l
For surface mounted applications in order to
optimize board space
l
Low profile package
l
Built-in strain relief
l
l
l
l
l
Glass passivated junction
Low inductance
Typical I
R
less than 1
£gA
above 11V
High temperature soldering :
260
¢J
/10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-214AA Molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
¢J
ambient temperature unless otherwise specified.
SYMBOL
DC Power Dissipation @ T
L
=75
¢J
, Measure at Zero Lead Length(Note 1, Fig. 1)
P
D
Derate above 75
¢J
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
I
FSM
load(JEDEC Method) (Note 1,2)
Operating Junction and Storage Temperature Range
T
J
,T
STG
NOTES:
1. Mounted on 5.0mm (.013mm thick) land areas.
2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device
function in thermal equilibrium with ambient temperature at 25
¢J
.
4.ZENER IMPEDANCE (Zz) DERIVATION Z
ZT
and Z
ZK
are measured by dividing the ac voltage drop across
the device by the accurrent applied. The specified limits are for I
Z(ac)
= 0.1 I
Z
, (dc) with the ac freqency = 60Hz.
2
DO-214AA
MODIFIED J-BEND
VALUE
1.5
15
10
-55 to +150
UNITS
Watts
mW/
¢J
Amps
¢J
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