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1N5347BS

Description
Product Status:Active, PD(%):5000, VZ(V):5, VZ @ IZT Nom.(V):10, VZ @ IZT Min.(V):9.5, VZ @ IZT Max.(Ω):10.5, ZZT @ IZT Max.(mA):2, IZT(Ω):125, ZZK @ IZK Max.(mA):125
CategoryDiscrete semiconductor    diode   
File Size87KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1N5347BS Overview

Product Status:Active, PD(%):5000, VZ(V):5, VZ @ IZT Nom.(V):10, VZ @ IZT Min.(V):9.5, VZ @ IZT Max.(Ω):10.5, ZZT @ IZT Max.(mA):2, IZT(Ω):125, ZZK @ IZK Max.(mA):125

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1N5347BS
SILICON ZENER DIODES
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Lead free in compliance with EU RoHS 2011/65/EU directive
1.0(25.4)MIN.
10 Volt
CURRENT
5 Watt
• Low inductance
0.034(0.86)
0.028(0.71)
MECHANICAL DATA
• Case: JEDEC DO-15, Molded plastic over passivated junction
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Weight: 0.014 ounce, 0.0397 gram
0.300(7.6)
0.230(5.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Power Dissipation (NOTE 1)
Operating Junction and StorageTemperature Range
Symbol
1.0(25.4)MIN.
• Polarity: Color band denotes cathode end
0.140(3.6)
0.104(2.6)
Value
5
-55 to +150
Unit
W
O
P
D
T
J
, T
STG
C
NOTE :
1.The testing condition of the thermal resistance (junction to ambient and junction to lead) is based on 0 mm lead length between
two 10cm x 10cm copper pad
No mi nal Ze ner Vo lta g e
V
Z
@ I
ZT
No m. V
10
Mi n. V
9.5
Ma x. V
10.5
2
Ma xi mum Zene r Imp e d anc e
Z
ZT
@ I
ZT
mA
125
125
Z
ZK
@ I
ZK
mA
1
Maximum
Leakage Current
I
R
A
5
V
R
V
7.6
April 11,2014-REV.00
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