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1N5230B

Description
Zener diode
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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1N5230B Overview

Zener diode

4.7 V, 0.5 W, 硅, 单向电压稳压二极管, DO-35

Features

Product Name: Zener diode


Product model: 1N5230B


product features:


Ptot 500mW


Vz 2.4V-75V



Product Usage:


Stabilizing Voltage



product data:


Zener voltage range Vz at Izt Rated Zener voltage: 4.7V


Test current Izt Test current: 20mA


Dynamic resistance Maximum dynamic resistance:


Zzt at Izt: 19Ω


Zzk at Izk =0.25mA :1900Ω


Temperature of Coefficient at Izt Temperature coefficient: 0.030%/K


Reverse leakage current Maximum reverse leakage current: IR: 5μA VR=2V


Maximum junction temperature Tj: 175℃


Storage temperature range Tstg: -65~+175℃



Package: DO-35


1N5230B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance19 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage4.7 V
surface mountNO
Working test current20 mA

1N5230B Preview

Download Datasheet
1N5221B~1N5267B
Zener diode
Features
1.High reliability
2.Very sharp reverse characteristic
3.Low reverse current level
4.Vz-tolerance
*
5%
Voltage Range
2.4 to 75 Volts
DO-35
1.02(26.0)
MIN
.079(2.0)
MAX
.165(4.2)
MAX
Applications
Voltage stabilization
1.02(26.0)
MIN
Absoluto Maximum Ratings
0
Tj=25 C
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
*75
0
C
Type
.020(.52)
TYP
Dimensions in inches and (millimeters)
Symbol
P
D
l
z
Tj
Tstg
Value
500
P
D
/V
z
200
-65~+200
Unit
mW
mA
0
C
0
C
Maximum Thermal Resistance
Tj=25
0
C
Parameter
Junction ambient
Test Condltions
I=9.5mm(3/8") T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrcal Characteristics
Tj=25
0
C
Parameter
Forward voltage
Test Conditions
l
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V

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