1N4001 THRU 1N4007
1.0AMP . SILICON RECTIFIERS
FEATURE
.High
current capability
.Low
forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260°C /10sec/ 0.375" lead length at 5 lbs tension
DO-41
.787(20.0)
MIN.
.205(5.2)
.166(4.2)
.787(20.0)
MIN.
.107(2.7)
.080(2.0)
DIA.
+
-
MECHANICAL DATA
.Terminal:
Plated axial leads solderable per
MIL-STD 202E, method 208C
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Polarity:
color band denotes cathode
.Mounting
position: any
.032(0.8)
.025(0.65)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) lead length at T
A
=55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at rated DC blocking voltage
@T
A
=25°C
@T
A
=100°C
SYM
BOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
V
F
I
R
C
J
R
(JA)
T
STG
T
J
1N
4001
50
35
50
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1.0
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
units
V
V
V
A
30.0
1.0
1.3
5.0
100.0
15
75
-55 to +150
-55 to +150
A
V
V
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
Operation JunctionTemperature
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C.Board Mounted.
- 341 -
Parametric
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RF/Wirelessly
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