1E3 datasheet, PDF - EEWORLD Datasheet

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1E3: Description1 A, 200 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1E3 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.035 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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1E1 ~ 1E6

SUPERFAST RECOVERY RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Superfast recovery times-epitaxial construction.

• Low forward voltage, high current capability.

• Exceeds environmental standards of MIL-S-19500/228.

• Hermetically sealed.

.138(3.5)

50 to 800 Volts

CURRENT

1.0 Ampere

R-1

Unit: inch(mm)

.787(20.0)MIN.

.025(.64)

.021(.53)

• Low leakage.

• High surge capability.

• In compliance with EU RoHS 2002/95/EC directives

.787(20.0)MIN.

.114(2.9)

MECHANICALDATA

• Case: Molded plastic, R-1.

• Terminals: Axial leads, solderable to MIL-STD-750, Method 2026

• Polarity: Color Band denotes cathode end.

• Mounting Position: Any

• Weight: 0.0068 ounce, 0.1937 gram

.102(2.6)

.087(2.2)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz.

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )

l e a d l e ng t h a t T

= 5 5

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng Vo l t a g e T

= 1 0 0

Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )

M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L 1 E 1

RRM

RMS

D C

F ( A V )

F S M

J A

, T

S T G

1E2 1E2A 1E3 1E3A 1E4

100

150

105

150

200

140

200

300

210

300

400

280

400

1E5

600

420

600

1E6

800

560

800

U N IT S

1 .0

0 .9 5

1 .0

150

-5 5 to +1 5 0

1 .2 5

1 .7

C / W

NOTES:

1. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

STAD-MAR.06.2009

PAGE . 1

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