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10N50TF

File Size538KB,7 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
Download Datasheet Parametric View All

10N50TF Parametric

Parameter NameAttribute value
type-
Drain-source voltage (Vdss)-
Continuous drain current (Id)-
Power(Pd)-
On-resistance (RDS(on)@Vgs,Id)-
Threshold voltage (Vgs(th)@Id)-
Gate charge (Qg@Vgs)-
Input capacitance (Ciss@Vds)-
Reverse transfer capacitance (Crss@Vds)-

10N50TF Preview

Download Datasheet
10N50TF
10 Amps,500 Volts N-CHANNEL Power MOSFET
FEATURE
10A,500V,R
DS(ON)MAX
=0.75
Ω@V
GS
=10V/5A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
H
alogen free
TO-220TF
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
T
J
,T
STG
T
L
10N50TF
500
UNIT
V
A
mJ
V/ns
lbf·in
N·m
±30
10
40
580
5
-55to+150
260
10
1.1
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
T
C
=25℃
Symbol
R
th(ch-c)
R
th(ch-a)
P
D
10N50TF
3.13
62.5
40
Units
℃/W
℃/W
W
http:// www.perfectway.cn
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